Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO 2 /4H-SiC MOSFETs

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Authors: Patrick Fiorenza, Filippo Giannazzo, Salvatore Cascino, Mario Saggio, Fabrizio Roccaforte

Journal title: Applied Physics Letters

Journal number: 117/10

Journal publisher: American Institute of Physics

Published year: 2020

Published pages: 103502

DOI identifier: 10.1063/5.0012399

ISSN: 0003-6951