Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

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Authors: M. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte

Journal title: Materials Science in Semiconductor Processing

Journal number: 93

Journal publisher: Pergamon Press

Published year: 2019

Published pages: 274-279

DOI identifier: 10.1016/j.mssp.2019.01.019

ISSN: 1369-8001