Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

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Authors: P Fiorenza, M S Alessandrino, B Carbone, C Di Martino, A Russo, M Saggio, C Venuto, E Zanetti, F Giannazzo, F Roccaforte

Journal title: Nanotechnology

Journal number: 31/12

Journal publisher: Institute of Physics Publishing

Published year: 2020

Published pages: 125203

DOI identifier: 10.1088/1361-6528/ab5ff6

ISSN: 0957-4484