650 V p-GaN Gate Power HEMTs on 200 mm Engineered Substrates

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Authors: K. Geens, X. Li, M. Zhao, W. Guo, D. Wellekens, N. Posthuma, D. Fahle, O. Aktas, V. Odnoblyudov, S. Decoutere

Journal title: IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Journal number: Oct. 29 - 31, 2019

Journal publisher: IEEE

Published year: 2019

Published pages: pp. 292-296