Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer

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Authors: Joël Kanyandekwe, Yannick Baines, Jérôme Richy, Sylvie Favier, Charles Leroux, Denis Blachier, Yann Mazel, Marc Veillerot, Jean-Paul Barnes, Mrad Mrad, Cindy Wiese, Matthew Charles

Journal title: Journal of Crystal Growth

Journal number: 515

Journal publisher: Elsevier BV

Published year: 2019

Published pages: 48-52

DOI identifier: 10.1016/j.jcrysgro.2019.03.007

ISSN: 0022-0248