Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration

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Authors: Z. Gao, M. Meneghini, F. Rampazzo, M. Rzin, C. De Santi, G. Meneghesso, E. Zanoni

Journal title: Microelectronics Reliability

Journal number: 100-101

Journal publisher: Elsevier BV

Published year: 2019

Published pages: 113489

DOI identifier: 10.1016/j.microrel.2019.113489

ISSN: 0026-2714