Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Z. Gao, F. Rampazzo, M. Meneghini, C. De Santi, F. Chiocchetta, D. Marcon, G. Meneghesso, E. Zanoni

Journal title: Microelectronics Reliability

Journal number: 114

Journal publisher: Elsevier BV

Published year: 2020

Published pages: 113905

DOI identifier: 10.1016/j.microrel.2020.113905

ISSN: 0026-2714