Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

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Authors: M Florovič, J Kováč, J Kováč, A Chvála, M Weis, J-C Jacquet, S L Delage

Journal title: Semiconductor Science and Technology

Journal number: 36/2

Journal publisher: Institute of Physics Publishing

Published year: 2020

Published pages: 025019

DOI identifier: 10.1088/1361-6641/abd15a

ISSN: 0268-1242