Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

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Authors: A. Nardo, C. De Santi, C. Koller, C. Ostermaier, I. Daumiller, G. Meneghesso, E. Zanoni, M. Meneghini

Journal title: Microelectronics Reliability

Journal number: 126

Journal publisher: Elsevier BV

Published year: 2021

DOI identifier: 10.1016/j.microrel.2021.114255

ISSN: 0026-2714