P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

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Authors: Minghua Zhu, Catherine Erine, Jun Ma, Mohammad Samizadeh Nikoo, Luca Nela, Pirouz Sohi, Elison Matioli

Journal title: IEEE Electron Device Letters

Journal number: 42/1

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2021

Published pages: 82-85

DOI identifier: 10.1109/led.2020.3037026

ISSN: 0741-3106