Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

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Authors: Minghua Zhu, Jun Ma, Elison Matioli

Journal title: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Journal publisher: IEEE

Published year: 2020

Published pages: 345-348

DOI identifier: 10.1109/ispsd46842.2020.9170183

ISBN: 978-1-7281-4836-6