High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Summary

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Luca Nela; Catherine Erine; Jun Ma; Halil Kerim Yildirim; Remco Van Erp; Peng Xiang; Kai Cheng; Elison Matioli

Journal title: 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Journal number: 30 May-3 June 2021

Journal publisher: IEEE

Published year: 2021

Published pages: 143-146

DOI identifier: 10.23919/ispsd50666.2021.9452238

ISBN: 978-4-88686-422-2