High-performance normally-off tri-gate GaN power MOSFETs

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Authors: Minghua Zhu, Jun Ma, Luca Nela, Elison Matioli

Journal title: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Journal publisher: IEEE

Published year: 2019

Published pages: 71-74

DOI identifier: 10.1109/ispsd.2019.8757690

ISBN: 978-1-7281-0581-9