High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

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Authors: Minghua Zhu, Jun Ma, Luca Nela, Catherine Erine, Elison Matioli

Journal title: IEEE Electron Device Letters

Journal number: 40/8

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 1289-1292

DOI identifier: 10.1109/led.2019.2922204

ISSN: 0741-3106