Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

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Authors: Matteo Borga, Kalparupa Mukherjee, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Journal title: Applied Physics Express

Journal number: 13/2

Journal publisher: Japan Soc of Applied Physics

Published year: 2020

Published pages: 024006

DOI identifier: 10.35848/1882-0786/ab6ef8

ISSN: 1882-0778