Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

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Authors: M. Heuken, D. Fahle, M. Zhao, K. Geens, X. Li, D. Wellekens, A. Magnani, N. Amirifar, B. Bakeroot, S. You, V. Odnoblyudov, O. Aktas, C. Basceri, D. Marcon, G. Groeseneken, S. Decoutere, H. Hahn

Journal title: DGKK wokshop on epitaxy of III-V semiconductor compounds

Journal publisher: TU Dresden

Published year: 2019