Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

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Authors: Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, and Stefaan Decoutere

Journal title: Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS)

Journal publisher: IEEE

Published year: 2020