Dopant Redistribution and Activation in Ga Ion-Implanted High Ge Content SiGe by Explosive Crystallization during UV Nanosecond Pulsed Laser Annealing

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Authors: Toshiyuki Tabata, Huet Karim, Fabien Rozé, Fulvio Mazzamuto, Bernard Sermage, Petros Kopalidis, Dwight Roh

Journal title: ECS Journal of Solid State Science and Technology

Journal number: 10/2

Journal publisher: Electrochemical Society, Inc.

Published year: 2021

Published pages: 023005

DOI identifier: 10.1149/2162-8777/abe2ee

ISSN: 2162-8769