High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

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Authors: M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, B. Bakeroot, S. Decoutere, A. N. Tallarico

Journal title: IEEE Transactions on Electron Devices

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2021

Published pages: 1-6

DOI identifier: 10.1109/ted.2021.3111144

ISSN: 0018-9383