TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

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Authors: A. N. Tallarico, M. Millesimo, B. Bakeroot, M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna

Journal title: IEEE Transactions on Electron Devices

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2022

DOI identifier: 10.1109/ted.2021.3134928

ISSN: 0018-9383