Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Summary

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Authors: M. Vivona, G. Greco, M. Spera, P. Fiorenza, F. Giannazzo, A. La Magna, F. Roccaforte,

Journal title: J. Phys. D: Appl. Phys.

Journal number: 54

Journal publisher: Institute of Physics Publishing

Published year: 2021

DOI identifier: 10.1088/1361-6463/ac13f3

ISSN: 0022-3727