SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs

Summary

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: P. Fiorenza, C. Bongiorno, A. Messina, M. Saggio, F. Giannazzo, F. Roccaforte,

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/irps48227.2022.9764490