Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

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Authors: P. Fiorenza, C. Bongiorno, F. Giannazzo, M.S. Alessandrino, A. Messina, M. Saggio, F. Roccaforte

Journal title: Applied Surface Science

Journal number: 557

Journal publisher: Elsevier BV

Published year: 2021

DOI identifier: 10.1016/j.apsusc.2021.149752

ISSN: 0169-4332