Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs

Summary

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Authors: M. Cioni, P. Fiorenza, F. Roccaforte, M. Saggio, S. Cascino, A. Messina, V. Vinciguerra, M. Calabretta, A. Chini

Journal title: IEEE International Reliability Physics Symposium (IRPS2022)

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/irps48227.2022.9764543