Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

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Authors: M. Millesimo; B. Bakeroot; M. Borga; N. Posthuma; S. Decoutere; E. Sangiorgi; C. Fiegna; A. N. Tallarico

Journal title: 2022 IEEE International Reliability Physics Symposium (IRPS)

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/irps48227.2022.9764592