"Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier"

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Authors: Z. Gao, F. Chiocchetta, N. Modolo, C. De Santi, F. Rampazzo, M. Meneghini, G. Meneghesso, et al

Journal title: 2022 IEEE International Reliability Physics Symposium

Journal number: Pages P51-1–P51-6

Journal publisher: IEEE Press

Published year: 2022

DOI identifier: 10.1109/irps48227.2022.9764531