Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs

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Authors: F. Chiocchetta, C. De Santi, F. Rampazzo, K. Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, G. Meneghesso, E. Zanoni, M. Meneghini

Journal title: Microelectronics Reliability

Journal number: 00262714

Journal publisher: Elsevier BV

Published year: 2022

DOI identifier: 10.1016/j.microrel.2022.114735

ISSN: 0026-2714