Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications

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Authors: A. Sünbül, T. Ali, K. Mertens, R. Olivo, D. Lehninger, F. Müller, M. Lederer, K. Kühnel, M. Rudolph, S. Oehler, R. Hoffmann, K. Zimmermann, K. Biedermann, P. Schramm, M. Czernohorsky, K. Seidel, T. Kämpfe, L. M. Eng

Journal title: IEEE Transactions on Electron Devices

Journal number: 00189383

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2021

DOI identifier: 10.1109/ted.2021.3131971

ISSN: 0018-9383