16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors

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Authors: L. Grenouillet, N. Castellani, A. Persico, V. Meli, S. Martin, O. Billoint, R. Segaud, S. Bernasconi, C. Pellissier, C. Jahan, C. Charpin-Nicolle, P. Dezest, C. Carabasse, P. Besombes, S. Ricavy, N.-P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, T. Magis, M. Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, E. Vianello, G. Molas, F. Gaillard, J. Arcamone, E. Nowak

Journal title: IEEE International Memory Workshop (IMW)

Journal publisher: IEEE

Published year: 2021

DOI identifier: 10.1109/imw51353.2021.9439607