Impact of the ferroelectric and interface layer optimization in a MFIS HZO based Ferroelectric Tunnel Junction for optimal neuromorphic based synaptic storage

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Authors: T. Ali, A. Sünbül, K. Mertens, R. Revello, M. Lederer, D. Lehninger, F. Müller, K. Kühnel, M. Rudolph, S. Oehler, R. Hoffmann, K. Zimmermann, K. Biedermann, M. Czernohorsky, K. Seidel, T. Kämpfe, L.M. Eng

Journal title: Silicon Nanoelectronics Workshop (SNW)

Journal publisher: IEEE

Published year: 2021

DOI identifier: 10.1109/snw51795.2021.00032