The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

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Authors: M. Millesimo; M. Borga; B. Bakeroot; N. Posthuma; S. Decoutere; E. Sangiorgi; C. Fiegna; A. N. Tallarico

Journal title: IEEE Electron Device Letters

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/led.2022.3206610

ISSN: 1558-0563