Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

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Authors: F. Bonet, O. Aviñó-Salvadó, M. Vellvehi, X. Jordà, P. Godignon and X. Perpiñà

Journal title: Electron Device Letters

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/led.2022.3171112

ISSN: 1558-0563