Dopant Incomplete Ionization Role in SiC Schottky Diode Edge Termination under Current Over-Stress

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Authors: O. Aviñó, F. Bonet, M. Vellvehí, P. Godignon, X. Jordà and X. Perpiñà

Journal title: IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/wipdaeurope55971.2022.9936256