Charge Trapping Mechanisms in Nitridated SiO2/4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry

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Authors: P. Fiorenza, C. Bongiorno, A. Messina, M. Saggio, F. Giannazzo, F. Roccaforte

Journal title: Materials Science Forum

Journal publisher: Trans Tech Publications Ltd

Published year: 2022

DOI identifier: 10.4028/p-u08hm8

ISSN: 0255-5476