3-D device electro-thermal simulation methodology for optimization of SiC power MOSFET under UIS test condition.

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Authors: CHVÁLA, Aleš - MAREK, Juraj - KOZÁRIK, Jozef - MESSINA, Angelo Alberto - VINCIGUERRA, Vincenzo - DONOVAL, Daniel

Journal title: ICSCRM 2022

Journal publisher: ICSCRM 2022

Published year: 2022