First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories

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Authors: Cai, Kaiming; Talmelli, G; Fan, K; Van Beek, S; Kateel, V; Gupta, M; Monteiro, M.G.; Ben Chroud, M.; Jayakumar, G.; Trovato, A.; Rao, S.; Kar, G.S.; Couet, S.

Journal title: 2022 International Electron Devices Meeting (IEDM)

Journal number: 10

Journal publisher: IEEE

Published year: 2023

DOI identifier: 10.1109/IEDM45625.2022.10019360