Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

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Authors: Kalparupa Mukherjee; Carlo De Santi; Matteo Buffolo; Matteo Borga; Shuzhen You; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini

Journal title: ISSN: 2072-666X

Journal number: 4

Journal publisher: Multidisciplinary Digital Publishing Institute (MDPI)

Published year: 2021

DOI identifier: 10.3390/mi12040445

ISSN: 2072-666X