Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors

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Authors: Andrea Natale Tallarico; Susanna Reggiani; Riccardo Depetro; Giuseppe Croce; Enrico Sangiorgi; Claudio Fiegna

Journal title: IRPS

Journal number: 5

Journal publisher: IEEE

Published year: 2020

DOI identifier: 10.1109/irps45951.2020.9129112