Study and characterization of GaN MOS capacitors: Planar vs trench topographies

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Authors: K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, B. Bakeroot, P. Diehle, F. Altmann, G. Meneghesso, E. Zanoni, and M. Meneghini

Journal title: Applied Physics Letters

Journal number: 120, 143501 (2022)

Journal publisher: American Institute of Physics

Published year: 2022

DOI identifier: 10.1063/5.0087245

ISSN: 0003-6951