Comparison of the parasitic Impedances from the Drain-Source Path of Power Transistor Packages at up to 2 GHz

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Thomas Moldaschl, Stefan Woetzel, Riccardo Latella, Maurizio Galvano, Alfred Binder

Journal title: Engineering Reports

Journal number: 16 December 2021

Journal publisher: John Wiley & Sons, Ltd

Published year: 2021

DOI identifier: 10.1002/eng2.12489

ISSN: 2577-8196