Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si (111) interface in GaN-based HEMT buffer stacks

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Authors: C Mauder, H Hahn, M Marx, Z Gao, R Oligschlaeger, T Zweipfennig, A Noculak, R Negra, H Kalisch, A Vescan, M Heuken

Journal title: Semiconductor Science and Technology

Journal number: 36 (7), 075008

Journal publisher: Institute of Physics Publishing

Published year: 2021

DOI identifier: 10.1088/1361-6641/ac02da

ISSN: 0268-1242