Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate

Summary

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Taifang Wang, Yuan Zong, Luca Nela, Elison Matioli

Journal title: Applied Physics Letters

Journal number: 121, 053501 (2022)

Journal publisher: American Institute of Physics

Published year: 2022

Published pages: 53501

DOI identifier: 10.1063/5.0098052

ISSN: 0003-6951