Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

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Authors: D. Favero; C. De Santi; K. Mukherjee; K. Geens; M. Borga; B. Bakeroot; S. You; S. Decoutere; G. Meneghesso; E. Zanoni; M. Meneghini

Journal title: 2022 IEEE International Reliability Physics Symposium, IRPS 2022

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/irps48227.2022.9764600