Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Patrick Diehle, Susanne Hübner, Carlo De Santi, Kalparupa Mukherjee, Enrico Zanoni, Matteo Meneghini, Karen Geens, Shuzhen You, Stefaan Decoutere, Frank Altmann

Journal title: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM)

Journal publisher: IEEE

Published year: 2021

DOI identifier: 10.1109/asdam50306.2020.9393835

ISSN: 78-1-7281-9776-0