Understanding the mechanism of Ga incorporation in InAlN and InGaN grown by MOCVD

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Authors: D. Meyer, F. Sandbaumhüter, C. Mauder, O. Rockenfeller, A. Debald, A.R. Boyd, and M. Heuken

Journal title: GaN Marathon 2022

Journal publisher: C.L.E.U.P.

Published year: 2022

ISBN: 9788854955271