Robust Binary Neural Network Operation from 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses

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Authors: Sourav De; Hoang-Hiep Le; Bo-Han Qiu; Md. Aftab Baig; Po-Jung Sung; Chung Jun Su; Yao-Jen Lee; Darsen D. Lu

Journal title: IEEE Electron Device Letters

Journal number: Volume: 42, Issue: 8

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2021

Published pages: 1144-1147

DOI identifier: 10.1109/led.2021.3089621

ISSN: 0741-3106