An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models

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Authors: A.S.N. Pereira, G. de Streel, N. Planes, M. Haond, R. Giacomini, D. Flandre, V. Kilchytska

Journal title: Solid-State Electronics

Journal number: 128

Journal publisher: Pergamon Press Ltd.

Published year: 2017

Published pages: 67-71

DOI identifier: 10.1016/j.sse.2016.10.017

ISSN: 0038-1101