High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation

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Authors: M. Czernohorsky, K. Seidel, K. Kühnel, J. Niess, N. Sacher, W. Kegel, W. Lerch

Journal title: Microelectronic Engineering

Journal number: 178

Journal publisher: Elsevier BV

Published year: 2017

Published pages: 262-265

DOI identifier: 10.1016/j.mee.2017.05.041

ISSN: 0167-9317