Mechanical simulation of stress engineering solutions in highly strained p-type FDSOI MOSFETs for 14-nm node and beyond

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Authors: A. Idrissi-El Oudrhiri, S. Martinie, J-C. Barbe, O. Rozeau, C. Le Royer, M-A. Jaud, J. Lacord, N. Bernier, L. Grenouillet, P. Rivallin, J. Pelloux-Prayer, M. Casse, M. Mouis

Journal title: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Journal publisher: IEEE

Published year: 2015

Published pages: 206-209

DOI identifier: 10.1109/SISPAD.2015.7292295

ISBN: 978-1-4673-7860-4