In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Aurèle Durand, Melissa Kaufling, Delphine Le-Cunff, Denis Rouchon, Patrice Gergaud

Journal title: Materials Science in Semiconductor Processing

Journal number: 70

Journal publisher: Pergamon Press

Published year: 2017

Published pages: 99-104

DOI identifier: 10.1016/j.mssp.2016.12.003

ISSN: 1369-8001